Perspectives of Double Feeding of the Melt Method on the Example of the Analysis of the InAs(1-x)–GaAs(x) Solid Solution Crystals Growth
Downloads
Using the example of InAs-GaAs system, the potential of double feeding of the melt method for growing single crystals of semiconductor solid solutions is shown. The concentration profiles of InAs-GaAs solid solutions crystals for certain modes of the considered method are calculated in Pfann approximation. In addition, under the same conditions, InAs-GaAs crystals were grown and their concentration profiles were determined. The results obtained give good agreement between the experimental and calculated data. It is shown that mathematical modeling of InAs-GaAs crystals growth by setting the crystallization and melt-feeding rates with constituent components makes it possible to obtain the required distribution of the main components in the direction of crystal growth, including uniform distribution, in the entire series of continuous InAs-GaAs solid solutions. The double feeding of the melt method is shown to be promising for obtaining single crystals of semiconductor solid solutions with a given concentration profile.
Downloads
R. A. Smith, “Semiconductors”, Cambridge University Press; First. edition (January 2, 1959)
QingLi Zhang, ShaoTang Yin, DunLu Sun, SongMing Wan, “Segregation during crystal growth from melt and absorption cross section determination by optical absorption method”, Science in China Series G: Physics, Mechanics and Astronomy, vol. 51, pp. 481–491, 2008. https://link.springer.com/article/10.1007/s11433-008-0064-z
G. Kh. Azhdarov, Т. Kucukomeroglu, А. Varilci et al., “Distribution of components in Ge–Si bulk single crystals grown under the continuous feeding of the melt with the second component (Si)”, Journal of Crystal Growth, vol. 226, no. 4, pp. 437-442, 2001. https://www.sciencedirect.com/science/article/pii/S0022024801012702
Т.А. Campbell, М. Schweizer, Р. Dold et al., “Float zone growth and characterization of Ge1−xSix (x⩽10 at%) single crystals”, Journal of Crystal Growth, vol. 226, no. 2-3, pp. 231-239, 2001. https://www.sciencedirect.com/science/article/pii/S002202480101394X
K. Nakajima, T. Kusunoki, Y. Azuma et al., “Compositional variation in Si-rich SiGe single crystals grown by multi-component zone melting method using Si seed and source crystals”, Journal of Crystal Growth, vol. 240, no. 3-4, pp. 373-381, 2002. https://www.sciencedirect.com/science/article/pii/S0022024802009405
А. Dahlen, Fattah, G. Hanke, Karthaus, “Bridgman and Czochralski growth of Ge-Si alloy crystals” Cryst. Res. Technol. vol. 29, no. 2, pp. 187-198, 1994. https://onlinelibrary.wiley.com/doi/abs/10.1002/crat.2170290206
N.V. Abrosimov, S.N. Rossolenko, W. Thieme et al., “Czochralski growth of Si- and Ge-rich SiGe single crystals”, Journal of Crystal Growth, vol.174, no. 1-4, pp. 182-186, 1997. https://www.sciencedirect.com/science/article/pii/S0022024896011025
G. Kh. Azhdarov, Z. M. Zeynalov, Z. A. Agamaliyev, A. I. Kyazimova, “Growth of Single Crystals of Semiconductor Solid Solutions by Double Feeding of the Melt Method”, Crystallography Reports, vol. 55, no. 4, pp. 716-719, 2010. https://link.springer.com/article/10.1134/S1063774510040309
Z. A. Agamaliyev, M. A. Ramazanov, G. Kh. Azhdarov, “A Model for Crystal Growth of Solid Solutions in the InAs–GaAs System by a Modified Floating-Zone Technique”, Inorganic materials, vol. 55, no. 3, pp. 205-209, 2019. https://link.springer.com/article/10.1134/S0020168519030014
З.М. Захрабекова. Кристаллы твердых растворов Ge-Si: Получение и электрические свойства твердых растворов сложнолегированных кристаллов Ge-Si с примесями меди, алюминия и сурьмы, (Германия: Lambert Akademic Publishing, 2013).
Z.A. Agamaliyev, E.M. Islamzade, G.Kh. Azhdarov, “Modeling the distribution of Ga and Sb impurities in Ge‒Si single crystals grown by double feeding of the melt: Growth conditions for homogeneous single crystals”, Crystallography Reports, vol. 61, no. 2, pp. 327- 330, 2016. https://link.springer.com/article/10.1134/S1063774516020024
G. Azhdarov, R. Kyazimzade, “Growth of homogeneous single crystals of GeSi solid solutions using a Ge seed by the modified Bridgman method”, Crystallography Reports. vol. 50, no. 1, pp. S149-S151, 2005. https://link.springer.com/article/10.1134/1.2133992
G.Kh. Azhdarov, Z.A. Agamaliev, E.M. Islamzade, “Hybrid technique for growing homogeneous single crystals of semiconductor solid solutions from melt”, Crystallography Reports, vol. 59, no. 3, pp. 442-445, 2014. https://link.springer.com/article/10.1134/S1063774514020059
Hiroki, Miyata, “Crystallographic investigation of homogeneous SiGe single crystals grown by the traveling liquidus-zone method”, Journal of Crystal Growth, vol. 303, no. 2, pp. 607-611, 2007. https://www.sciencedirect.com/science/article/pii/S0022024807000516
Copyright (c) 2022 International Journal of Scientific Research and Management
This work is licensed under a Creative Commons Attribution 4.0 International License.
